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PD - 5.028
CPU165MF
IGBT SIP MODULE
Features
* * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
Fast IGBT
1,2
4 5
Q1
D1 6,7
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive 14 ARMS with TC = 90C, TJ = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
9
Q2
D2
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
IMS-1
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 42 23 120 120 15 120 20 2500 83 33 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m)
Units
V
A
V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module
Typ.
-- -- 0.1 20 (0.7)
Max.
1.5 2.0 -- --
Units
C/W g (oz)
Revision 1
C-133
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CPU165MF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units 600 -- -- V -- 0.62 -- V/C -- 1.3 1.5 -- 1.7 -- V -- 1.4 -- 3.0 -- 5.5 -- -14 -- mV/C 21 30 -- S -- -- 250 A -- -- 6500 -- 1.3 1.7 V -- 1.2 1.5 -- -- 500 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 23A VGE = 15V IC = 42A See Fig. 2, 5 IC = 23A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 39A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 25A See Fig. 13 IC = 25A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 84 20 51 24 50 270 210 1.1 2.1 3.2 25 49 440 410 5.8 3000 340 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 100 IC = 39A 25 nC VCC = 400V 67 See Fig. 8 -- TJ = 25C -- ns IC = 39A, VCC = 480V 540 VGE = 15V, RG = 5.0 360 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 5.4 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 39A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
C-134
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CPU165MF
30 9.3
20
6.2
Total O utp ut P o w er (kW )
20
L oad C u rrent (A )
S
10
3.1
TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage
0 0.1 1 10 100 0
f, F re quency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
1000
I C , Collector-to-E m itter C urrent (A)
IC , Collector-to-E m itter C urrent (A )
TJ = 25 C
TJ = 2 5C TJ = 1 5 0C
100
100
TJ = 1 50 C
10
10
1 0.1 1
V G E = 15 V 2 0 s P U L S E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P U L S E W ID TH
15
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate -to-E m itter V olta ge (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-135
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CPU165MF
70
M aximum D C Collector Current (A )
60
VC E , C o llector-to-E mitte r V oltage (V )
V G E = 1 5V
3.0
VG E = 1 5 V 80 s P UL S E W ID TH I C = 78 A
2.5
50
40
2.0
30
I C = 39 A
1.5
20
10
I C = 20 A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T herm al Response (Z th JC )
D = 0 .5 0
0.2 0
0.1
0.1 0 0 .05 SIN G L E PU LS E (TH ER M AL R ES PO N S E)
N o te s: 1 . D u ty fa c to r D = t 1 /t 2
PD M
t
1 t2
0.0 2 0.0 1
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-136
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CPU165MF
7000
C , C apacitance (pF )
5000
Cies
4000
Coes
3000
V G E , G ate-to-Em itter V oltage (V )
1 00
6000
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 4 80 V I C = 3 9A
16
12
8
2000
Cres
1000
4
0 1 10
0 0 30 60 90 120
V C E , C o llector-to-Em itter V oltage (V)
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
7 .5
7 .0
T otal S w itc hing Lo sse s (m J)
Total S witching Losses (m J)
VC C VG E TC IC
= 4 80 V = 15 V = 25 C = 3 9A
100
R G = 2 .0 V GE = 1 5V V CC = 48 0V
I C = 7 8A
6 .5
10
I C = 39 A
I C = 2 0A
6 .0
5 .5 0 10 20 30 40 50
1 -60 -40 -20 0 20 40 60 80 100 120 140 1 60
R G , G ate R es istance ( )
W
TC , C ase Tem peratu re (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-137
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CPU165MF
25
20
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Total Sw itching Losses (m J )
RG TC V CC VGE
= 2 .0 = 1 50C = 48 0V = 15V
1000
VG E E 20 V G= T J = 12 5C
S A FE O P E RA TIN G A RE A
100
15
10
10
5
0 0 20 40 60 80
1 1 10 100 1000
I C , C ollecto r-to-E m itter C urrent (A )
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-138
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CPU165MF
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
t rr - (ns)
I IRRM - (A)
I F = 50A I F = 25A
10
80
IF = 50A I F = 25A
I F = 10A
60
IF = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. di/dt f
Fig. 15 - Typical Recovery Current vs. di/dt f
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
I F = 50A
di(rec)M/dt - (A/s)
Q RR - (nC)
1000
IF = 10A
600
IF = 25A
I F = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100
di f /dt - (A/s)
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. di/dt f C-139
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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CPU165MF
90% Vge +Vge
Same type device as D.U.T. Ic 430F D.U.T. td(off) 10% Vce
Vce
90% Ic Ic 5% Ic
80% of Vce
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr Ic
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
C-140
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